JPS6234719B2 - - Google Patents

Info

Publication number
JPS6234719B2
JPS6234719B2 JP56195609A JP19560981A JPS6234719B2 JP S6234719 B2 JPS6234719 B2 JP S6234719B2 JP 56195609 A JP56195609 A JP 56195609A JP 19560981 A JP19560981 A JP 19560981A JP S6234719 B2 JPS6234719 B2 JP S6234719B2
Authority
JP
Japan
Prior art keywords
single crystal
temperature
electric field
litao
predetermined
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56195609A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5899200A (ja
Inventor
Kenji Enokida
Yoshinori Okada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP56195609A priority Critical patent/JPS5899200A/ja
Publication of JPS5899200A publication Critical patent/JPS5899200A/ja
Publication of JPS6234719B2 publication Critical patent/JPS6234719B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C30B29/30—Niobates; Vanadates; Tantalates

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Inorganic Insulating Materials (AREA)
JP56195609A 1981-12-07 1981-12-07 リチウムタンタレ−ト単結晶の単一分域化方法 Granted JPS5899200A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56195609A JPS5899200A (ja) 1981-12-07 1981-12-07 リチウムタンタレ−ト単結晶の単一分域化方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56195609A JPS5899200A (ja) 1981-12-07 1981-12-07 リチウムタンタレ−ト単結晶の単一分域化方法

Publications (2)

Publication Number Publication Date
JPS5899200A JPS5899200A (ja) 1983-06-13
JPS6234719B2 true JPS6234719B2 (en]) 1987-07-28

Family

ID=16344001

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56195609A Granted JPS5899200A (ja) 1981-12-07 1981-12-07 リチウムタンタレ−ト単結晶の単一分域化方法

Country Status (1)

Country Link
JP (1) JPS5899200A (en])

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11236298A (ja) * 1997-12-05 1999-08-31 Crystal Technol Inc フォトリソグラフィー法に使用するための結晶および電磁線吸収能を増大させるための該結晶の前状態調節法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5932438B2 (ja) * 1976-11-22 1984-08-08 株式会社東芝 単結晶の単一分域化方法

Also Published As

Publication number Publication date
JPS5899200A (ja) 1983-06-13

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